HAT2203C-EL-E
HAT2203C-EL-E - SILICON N CHANNEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas HAT2203C-EL-E is an N-Channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 2 A at 25°C (Ta). The Rds On is specified at a maximum of 90 mOhm at 1 A, 4.5 V, with drive voltages ranging from 2.5 V to 4.5 V. The device exhibits a gate charge (Qg) of 1.8 nC at 4.5 V and input capacitance (Ciss) of 165 pF at 10 V. With a maximum power dissipation (Ta) of 830 mW and an operating temperature range up to 150°C, the HAT2203C-EL-E is suitable for power management and switching applications in industries such as consumer electronics and industrial automation. It is supplied in a 6-CMFPAK package.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
2SK3431-AZ
2SK3431-AZ - SWITCHING N-CHANNEL
2SK3714(0)-S12-AZ
2SK3714 - SWITCHING N-CHANNEL
