HAT2202C-EL-E
HAT2202C-EL-E - SILICON N CHANNEManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel MOSFET, part number HAT2202C-EL-E, offers a 20V drain-source voltage and a continuous drain current of 3A at 25°C. This device features a low on-resistance of 40mOhm at 1.5A and 4.5V Vgs. The 6-CMFPAK surface mount package facilitates efficient thermal management with a maximum power dissipation of 200mW. With a gate charge of 6nC at 4.5V and an input capacitance of 520pF at 10V, the HAT2202C-EL-E is suitable for applications requiring precise switching characteristics. It operates within a temperature range of -55°C to 150°C and supports gate drive voltages up to ±12V. This MOSFET is commonly utilized in power management circuits and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
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