HAT2196C-EL-E
HAT2196C - N-CHANNEL POWER MOSFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas HAT2196C-EL-E is an N-channel Power MOSFET with a Drain-Source Voltage (Vdss) of 20V. This device features a maximum continuous Drain Current (Id) of 2.5A at 25°C (Ta) and a maximum On-Resistance (Rds On) of 58mOhm at 1.3A and 4.5V Vgs. The Gate Charge (Qg) is 2.8 nC maximum at 4.5V Vgs, and the Input Capacitance (Ciss) is 270 pF maximum at 10V Vds. The device operates with a Gate-Source Voltage (Vgs) tolerance up to ±12V and has a threshold voltage (Vgs(th)) of 1.4V maximum at 1mA. With a maximum power dissipation of 850mW at 25°C (Ta), this MOSFET is designed for surface mounting in a 6-CMFPAK package, suitable for applications in consumer electronics and industrial automation. The specified drive voltages range from 2.5V to 4.5V.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 1.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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