HAT1096C-EL-E
HAT1096C - P-CHANNEL POWER MOSFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas P-Channel Power MOSFET, part number HAT1096C-EL-E, offers a 20 V drain-source voltage and a continuous drain current of 1 A at 25°C. This surface mount device features a maximum power dissipation of 790 mW. With a low on-resistance of 293 mOhm at 500 µA and 4.5 V, it utilizes MOSFET technology and is housed in a 6-CMFPAK package. The device supports gate drive voltages from 2.5 V to 4.5 V, has a maximum gate-source voltage of ±12 V, and a typical gate charge of 2 nC at 4.5 V. Its input capacitance is rated at 155 pF. The HAT1096C-EL-E is suitable for applications in consumer electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 293mOhm @ 500µA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 790mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 10 V |
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