HAT1091C-EL-E
HAT1091C-EL-E - SILICON P CHANNEManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas HAT1091C-EL-E is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) rating of 1.5A at 25°C (Ta). With a maximum power dissipation of 830mW (Ta), it is suitable for surface mount configurations utilizing the 6-CMFPAK package. Key electrical characteristics include a maximum Rds On of 175mOhm at 800mA and 4.5V, and gate drive voltages ranging from 2.5V to 4V. The device exhibits a typical input capacitance (Ciss) of 200pF at 10V and a gate charge (Qg) of 2.6nC at 4.5V. Operating temperature capabilities extend to 150°C. This MOSFET technology is commonly found in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 800mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
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