HAT1044M-EL-E
HAT1044M-EL-E - SILICON P CHANNEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas HAT1044M-EL-E is a P-Channel MOSFET designed for surface mount applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 4.5A at 25°C ambient temperature, with a maximum power dissipation of 1.05W (Ta). The on-resistance (Rds On) is specified at a maximum of 60mOhm at 3A and 10V Vgs. Gate drive voltage ranges from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 13 nC at 10V and a maximum input capacitance (Ciss) of 600 pF at 10V Vds. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. This component is housed in a 6-TSOP package, suitable for operation up to 150°C. The Renesas HAT1044M-EL-E finds application in power management circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
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