2SK4178-ZK-E1-AY
2SK4178 - SWITCHING N-CHANNEL POManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number 2SK4178-ZK-E1-AY, offers a 30V drain-source voltage and a continuous drain current of 48A at 25°C (Tc). This device features a low on-resistance of 9mOhm maximum at 30A and 10V Vgs. With a gate charge of 24 nC maximum at 10V and input capacitance of 1500 pF maximum at 10V Vds, it is suitable for high-efficiency switching applications. The power dissipation is rated at 1W (Ta) and 33W (Tc). The 2SK4178-ZK-E1-AY is packaged in a TO-252 (MP-3ZK) surface mount configuration, designed for operation up to 150°C. This MOSFET is commonly employed in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFE
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
