2SK4150TZ-E
2SK4150TZ - N-CHANNEL POWER MOSFManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel Power MOSFET, part number 2SK4150TZ-E, offers a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 400mA at 25°C. This through-hole component, packaged in a TO-92 (TO-226-3, TO-92-3) configuration, features a maximum power dissipation of 750mW (Ta) and a low on-resistance (Rds On) of 5.7 Ohm at 200mA and 4V gate-source voltage. The device exhibits a gate threshold voltage (Vgs(th)) of 1.5V at 1mA and a gate charge (Qg) of 3.7nC at 4V. Its input capacitance (Ciss) is a maximum of 80pF at 25V. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5.7Ohm @ 200mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 25 V |
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