2SK4092-S35-A
2SK4092-S35-A - SWITCHING N-CHANManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas 2SK4092-S35-A is an N-Channel MOSFET designed for high-voltage switching applications. This through-hole component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 21A at 25°C (Tc). With a maximum Rds(on) of 400mOhm at 10A and 10V, it offers efficient power handling. The device boasts a maximum power dissipation of 200W (Tc) and 3W (Ta) in a TO-3P (MP-88) package. Key parameters include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 3240 pF at 10V. Operating at temperatures up to 150°C, this MOSFET is suitable for power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-3P (MP-88) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 10 V |
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