2SK3902-ZK-E1-AY
2SK3902-ZK-E1-AY - SWITCHING N-CManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number 2SK3902-ZK-E1-AY, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C (Tc). This surface mount device, packaged in a TO-263-3 (D2PAK) configuration, features a maximum on-resistance of 21mOhm at 15A drain current and 10V gate-source voltage. Key parameters include a gate charge of 25nC (max) at 10V and input capacitance of 1200pF (max) at 10V. Power dissipation is rated at 1.5W (Ta) and 45W (Tc). This component is suitable for applications in power supply, motor control, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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