2SK3483-Z-AZ
2SK3483-Z-AZ - SWITCHING N-CHANNManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, part number 2SK3483-Z-AZ. This through-hole device features a 100 V drain-to-source breakdown voltage and a continuous drain current capability of 28A at 25°C ambient. The MOSFET exhibits a maximum on-resistance of 52mOhm at 14A and 10V Vgs, with a gate drive range from 4.5V to 10V. Key parameters include a maximum gate charge of 49 nC and input capacitance of 2300 pF, both specified at 10V Vds. Power dissipation is rated at 1W ambient and 40W case temperature. Operating temperature range extends to 150°C. The device is supplied in Bulk packaging within a TO-251-3 Short Leads (IPAK) package. This component is commonly utilized in industrial and automotive applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MP-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
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