2SK3483-AZ
2SK3483-AZ - SWITCHING N-CHANNELManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas 2SK3483-AZ is an N-Channel power MOSFET designed for switching applications. This component offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 28 A at 25°C ambient temperature. The device features a low on-resistance (Rds On) of 52 mOhm maximum at 14 A and 10 V gate-source voltage. With a maximum power dissipation of 1W ambient or 40W case temperature, the 2SK3483-AZ is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 49 nC maximum at 10 V and input capacitance (Ciss) of 2300 pF maximum at 10 V. The MOSFET utilizes through-hole mounting in an MP-3 package, specifically TO-251-3 Short Leads, IPAK. This device is commonly found in power supply units and industrial automation systems. The maximum gate-source voltage is ±20V, and the threshold voltage (Vgs(th)) is 2.5V maximum at 1mA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MP-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFE
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
