2SK3447TZ-E
2SK3447TZ-E - SILICON N CHANNELManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel MOSFET, part number 2SK3447TZ-E, offers a 150V drain-source voltage (Vdss) and a continuous drain current of 1A (Ta) at 25°C. This through-hole component features a TO-92MOD package and a maximum power dissipation of 900mW (Ta). Key electrical parameters include a maximum on-resistance (Rds On) of 1.95Ohms at 500mA and 10V, and a gate charge (Qg) of 4.5 nC at 10V. Input capacitance (Ciss) is 85 pF maximum at 10V. The device operates up to 150°C and supports gate-source voltages (Vgs) up to ±20V, with a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. This MOSFET is commonly utilized in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-92MOD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 10 V |
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