2SK3435-AZ
2SK3435-AZ - SWITCHING N-CHANNELManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number 2SK3435-AZ, features a 60V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This through-hole TO-220AB packaged device offers a low on-resistance of 14mOhm maximum at 40A and 10V drive voltage. Key parameters include input capacitance (Ciss) of 3200pF maximum at 10V and gate charge (Qg) of 60nC maximum at 10V. Power dissipation is rated at 1.5W (Ta) and 84W (Tc). The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. This component is utilized in industrial automation, power supply, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 84W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 10 V |
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