2SK3402-ZK-E1-AY
2SK3402-ZK-E1-AY - SWITCHING N-CManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas 2SK3402-ZK-E1-AY is an N-channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 36 A at 25°C (Tc). With a low on-resistance (Rds On) of 15 mOhm at 18 A and 10 V, it minimizes conduction losses. The 2SK3402-ZK-E1-AY offers a maximum power dissipation of 40 W (Tc) and 1 W (Ta), suitable for demanding thermal environments. Its TO-252 (MP-3Z) surface mount package facilitates efficient board integration. Key parameters include a gate charge (Qg) of 61 nC at 10 V and an input capacitance (Ciss) of 3200 pF at 10 V. This MOSFET is widely utilized in industrial power supplies, automotive electronics, and power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-252 (MP-3Z) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 10 V |
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