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2SK3377-Z-AZ

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2SK3377-Z-AZ

2SK3377-Z-AZ - SWITCHING N-CHANN

Manufacturer: Renesas

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas N-Channel MOSFET, Part Number 2SK3377-Z-AZ, is a surface mount device engineered for high-efficiency switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C (Ta). Key electrical parameters include a maximum Rds(On) of 44mOhm at 10A and 10V, and a gate charge (Qg) of 17 nC at 10V. The device exhibits a low input capacitance (Ciss) of 760 pF at 10V. Power dissipation is rated at 1W (Ta) and 30W (Tc). The 2SK3377-Z-AZ is housed in a TO-252-3, DPAK package. It finds application in power supply units, automotive electronics, and industrial motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Rds On (Max) @ Id, Vgs44mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageTO-252 (MP-3Z)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 10 V

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