2SK3357-A
2SK3357 - N-CHANNEL POWER MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas 2SK3357-A is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C with a thermal dissipation of 3W (Ta) or 150W (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 5.8mOhm at 38A and 10V, with a gate drive voltage range of 4V to 10V. Key parameters include a maximum gate charge (Qg) of 170nC and input capacitance (Ciss) of 9800pF at 10V. The component is housed in a TO-3P (MP-88) package, suitable for high-power switching and amplification circuits. This device is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-3P (MP-88) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9800 pF @ 10 V |
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