2SK3354-AZ
2SK3354-AZ - SWITCHING N-CHANNELManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, part number 2SK3354-AZ, offers a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 83A at 25°C (Tc). This through-hole device, packaged in a TO-220AB, features a low on-resistance (Rds On) of 8mOhm at 42A and 10V Vgs. Key parameters include a gate charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 6300 pF at 10V Vds. Power dissipation capabilities are rated at 1.5W (Ta) and 100W (Tc) with an operating temperature up to 150°C. The device supports drive voltages from 4V to 10V and a maximum Vgs of ±20V. It is utilized in power switching applications across various industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFE
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
