2SK2933-E
2SK2933 - N-CHANNEL POWER MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas 2SK2933-E is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 15A at 25°C. The on-resistance (Rds On) is specified at a maximum of 52mOhm at 8A and 10V Vgs, with a gate drive voltage range of 4V to 10V. The device offers a maximum power dissipation of 25W at 25°C and operates up to 150°C. Key parameters include input capacitance (Ciss) of 500pF at 10V and a Vgs(th) of 2.5V at 1mA. It is packaged in a TO-220CFM case. This MOSFET is suitable for use in power supply units, voltage regulators, and motor control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220CFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
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