2SK2857-T1-AZ
2SK2857-T1-AZ - N-CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel MOSFET, part number 2SK2857-T1-AZ, is a surface-mount device in an SC-62 package. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4A at 25°C ambient temperature, with a maximum power dissipation of 2W (Ta). The Rds On is specified at a maximum of 150mOhm at 2.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 10.6 nC (max) at 10V and input capacitance (Ciss) of 265 pF (max) at 10V Vds. This MOSFET is suitable for applications in power control and switching, found in sectors such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-62 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 10 V |
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