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2SK2498-AZ

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2SK2498-AZ

2SK2498 - SWITCHING N-CHANNEL PO

Manufacturer: Renesas

Categories: Single FETs, MOSFETs

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The Renesas 2SK2498-AZ is an N-Channel Power MOSFET designed for high-current switching applications. This through-hole component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 50A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 9mOhm at 25A and 10V Vgs. With a maximum power dissipation of 2W (Ta) and 35W (Tc), and an operating temperature of 150°C, it is suitable for demanding power management tasks. Gate drive requirements range from 4V to 10V, with a maximum gate-source voltage of ±20V. Key electrical parameters include input capacitance (Ciss) of 3400 pF (max) at 10V Vds and gate charge (Qg) of 152 nC (max) at 10V Vgs. The component is packaged in an isolated TO-220AB (ITO-220AB) package. This MOSFET is commonly utilized in power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Rds On (Max) @ Id, Vgs9mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageITO-220AB
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 10 V

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