2SK2461-AZ
2SK2461 - SILICON N CHANNEL MOSFManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel MOSFET, part number 2SK2461-AZ, is a silicon power MOSFET with a drain-source voltage (Vdss) of 100V. This through-hole component features a continuous drain current (Id) of 20A at 25°C (Ta) and a maximum power dissipation of 2W (Ta) or 35W (Tc). The on-resistance (Rds On) is a maximum of 80mOhm at 10A and 10V. Key parameters include input capacitance (Ciss) of 1400pF (Max) at 10V and gate charge (Qg) of 51nC (Max) at 10V. The package type is TO-220-3 Full Pack, Isolated Tab (ITO-220AB) for through-hole mounting. Operating temperature is up to 150°C. This device is suitable for applications in power switching and control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V |
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