2SK2157C-T1-AZ
2SK2157C-T1-AZ - N-CHANNEL MOS FManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, part number 2SK2157C-T1-AZ. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 3.5A at 25°C. The Rds(On) is specified at a maximum of 63mOhm at 2A, 4.5V, with a gate drive range of 2.5V to 4.5V. Key parameters include a maximum Gate Charge (Qg) of 4 nC at 4V and an Input Capacitance (Ciss) of 260 pF at 10V. Designed for surface mounting in the MP-2 (TO-243AA) package, this MOSFET offers a maximum power dissipation of 2W (Ta) and operates up to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | MP-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 10 V |
Request a Quote
Clients Also Buy
2SK4178-ZK-E1-AY
2SK4178 - SWITCHING N-CHANNEL PO
NP160N055TUJ-E1-AY
NP160N055TUJ-E1-AY - SWITCHINGN-
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
