2SK2109-T1-AZ
2SK2109-T1-AZ - N-CHANNEL MOS FEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number 2SK2109-T1-AZ, offers a 60V drain-source breakdown voltage and a continuous drain current of 500mA at 25°C ambient. This surface-mount device, housed in an SC-62 package (TO-243AA), features a maximum power dissipation of 2W (Ta) and a low on-resistance of 800mOhm at 300mA and 10V Vgs. The gate threshold voltage is specified at 2V maximum for 1mA drain current, with a maximum gate-source voltage tolerance of ±20V. Drive voltage ranges from 4V to 10V for optimal Rds(on) performance. Input capacitance (Ciss) is a maximum of 111pF at 10V Vds. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-62 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 111 pF @ 10 V |
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