2SK1958-T1-A
2SK1958-T1-A - N-CHANNEL MOS FETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas 2SK1958-T1-A is an N-Channel MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 16 V and a continuous Drain current (Id) of 100mA at 25°C (Ta). With a maximum power dissipation of 150mW (Ta), it is suitable for applications requiring low power consumption. The Rds On is a maximum of 12 Ohms at 10mA and 4V Vgs. Input capacitance (Ciss) is specified at a maximum of 10 pF at 3 V. The device operates within a temperature range of 150°C and is housed in an 8-MMPAK package, compatible with 8-TSSOP and 8-MSOP footprints. This MOSFET utilizes Metal Oxide technology.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP, 8-MSOP (0.110"", 2.80mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 8-MMPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±7V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 3 V |
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