2SK1581-T1B-A
2SK1581-T1B-A - SWITCHING N-CHANManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas 2SK1581-T1B-A is a surface mount N-Channel MOSFET designed for switching applications. This component features a drain-source breakdown voltage (Vdss) of 16 V and a continuous drain current (Id) capability of 200mA at 25°C ambient temperature. The device offers a maximum on-resistance (Rds On) of 5 Ohms at 1mA drain current and 4V gate-source voltage, with drive voltages ranging from 2.5V to 4V for optimal Rds On performance. The input capacitance (Ciss) is a maximum of 27 pF at 3V drain-source voltage. With a power dissipation of 200mW (Ta), this MOSFET is suitable for operation up to 150°C. The package type is TO-236-3, SC-59, SOT-23-3. This component finds application in various electronic systems, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 10µA |
| Supplier Device Package | SC-59 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF @ 3 V |
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