2SJ604-ZJ-E1-AZ
2SJ604-ZJ-E1-AZ - SWITCHING P-CHManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas 2SJ604-ZJ-E1-AZ is a P-Channel MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 45A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 30mOhm maximum at 23A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 63 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 3300 pF maximum at 10V Vds. With a maximum power dissipation of 1.5W at ambient temperature and 70W at case temperature, it is suitable for demanding power management tasks. The 2SJ604-ZJ-E1-AZ is housed in a TO-263-3, D2PAK package, facilitating surface mounting. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 10 V |
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