2SJ532-E
2SJ532 - P-CHANNEL POWER MOSFET,Manufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas 2SJ532-E is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 20A at 25°C. With a maximum power dissipation of 30W (Tc), it is suitable for thermal management considerations. The Rds On is specified at a maximum of 55mOhm at 10A and 10V gate-source voltage. Key parameters include a maximum Vgs of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 1mA. Input capacitance (Ciss) is rated at 1750 pF at 10V. The device utilizes a TO-220CFM package for through-hole mounting. This component is commonly found in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220CFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 10 V |
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