2SJ529L06-E
2SJ529L06 - P-CHANNEL POWER MOSFManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas P-Channel Power MOSFET, part number 2SJ529L06-E, offers a 60V drain-to-source voltage and a continuous drain current capability of 10A at 25°C ambient. This through-hole device features a low on-resistance of 160mOhm maximum at 5A and 10V Vgs. With a maximum power dissipation of 20W at the case temperature, it is suitable for applications requiring robust power handling. The 2SJ529L06-E utilizes MOSFET technology and is packaged in a TO-251-3 Long Leads, IPak (DPAK(L)-(2)) configuration, facilitating board-level integration. Its operating temperature range extends up to 150°C, making it a viable option for demanding industrial and automotive environments. Input capacitance is rated at 580pF maximum at 10V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK(L)-(2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 10 V |
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