2SJ358-T1-AZ
2SJ358-T1-AZ - P-CHANNEL MOS FETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas P-Channel MOSFET, part number 2SJ358-T1-AZ, offers a drain-source voltage of 60V and a continuous drain current of 3A at 25°C (Ta). This surface mount device, packaged in TO-243AA (MP-2), features a maximum power dissipation of 2W (Ta) and an on-resistance (Rds On) of 300mOhm at 1.5A and 10V Vgs. The gate charge (Qg) is 23.9 nC maximum at 10V, with input capacitance (Ciss) of 600 pF maximum at 10V. Drive voltages range from 4V to 10V. Applications include power switching and general-purpose amplification in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | MP-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | +10V, -20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
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