2SD1579-T-AZ
2SD1579-T-AZ - SMALL SIGNAL BIPOManufacturer: Renesas
Categories: Single Bipolar Transistors
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Renesas 2SD1579-T-AZ is a high-gain NPN Darlington bipolar transistor. This through-hole component features a maximum collector current (Ic) of 1.5 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a minimum DC current gain (hFE) of 2000 at 1A and 2V, it offers significant amplification capabilities. The transition frequency is 60 MHz, and it can dissipate up to 1 W of power. The Vce saturation is specified at 1.5V at 1mA base current and 1A collector current. Operating at temperatures up to 150°C (TJ), this device is suitable for applications in industrial automation and consumer electronics requiring robust switching and amplification. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SSIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | - |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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