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2SC4942-AZ

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2SC4942-AZ

2SC4942-AZ - NPN SILICON TRIPLE

Manufacturer: Renesas

Categories: Single Bipolar Transistors

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Renesas presents the 2SC4942-AZ, an NPN bipolar junction transistor (BJT) engineered for demanding applications. This device features a 600 V collector-emitter breakdown voltage and a maximum collector current of 1 A, with a typical saturation voltage of 1 V at 80 mA base current and 400 mA collector current. The 2SC4942-AZ offers a transition frequency of 30 MHz and a maximum power dissipation of 2 W. It is supplied in a TO-243AA (MP-2) surface mount package, suitable for high-density board designs. With a maximum operating junction temperature of 150°C, this transistor is commonly utilized in power supply units, lighting control, and general-purpose amplification circuits where high voltage and moderate current handling are required.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 80mA, 400mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 100mA, 5V
Frequency - Transition30MHz
Supplier Device PackageMP-2
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max2 W

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