2SC3380ASTR-E
2SC3380ASTR - SILICON NPN TRIPLEManufacturer: Renesas
Categories: Single Bipolar Transistors
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Renesas 2SC3380ASTR-E is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 100mA. With a transition frequency of 80MHz, it offers suitable performance for various switching and amplification tasks. The DC current gain (hFE) is a minimum of 30 at 20mA collector current and 20V collector-emitter voltage. The transistor exhibits a maximum power dissipation of 1W and an operating junction temperature up to 150°C. It is supplied in a UPAK (TO-243AA) package. This component finds application in power supply circuits, general-purpose amplification, and switching applications within consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 20V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | UPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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