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2SC3380ASTR-E

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2SC3380ASTR-E

2SC3380ASTR - SILICON NPN TRIPLE

Manufacturer: Renesas

Categories: Single Bipolar Transistors

Quality Control: Learn More

Renesas 2SC3380ASTR-E is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 100mA. With a transition frequency of 80MHz, it offers suitable performance for various switching and amplification tasks. The DC current gain (hFE) is a minimum of 30 at 20mA collector current and 20V collector-emitter voltage. The transistor exhibits a maximum power dissipation of 1W and an operating junction temperature up to 150°C. It is supplied in a UPAK (TO-243AA) package. This component finds application in power supply circuits, general-purpose amplification, and switching applications within consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 2mA, 20mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 20V
Frequency - Transition80MHz
Supplier Device PackageUPAK
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1 W

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