2SB601-AZ
2SB601 - PNP SILICON EPITAXIAL TManufacturer: Renesas
Categories: Single Bipolar Transistors
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Renesas 2SB601-AZ is a PNP silicon epitaxial planar bipolar transistor featuring a Darlington configuration. This device offers a high DC current gain (hFE) of a minimum of 2000 at 3A and 2V, with a collector-emitter breakdown voltage (Vce(max)) of 100V. The 2SB601-AZ supports a continuous collector current (Ic(max)) of up to 5A and has a collector-emitter saturation voltage (Vce(sat)) of 1.5V at 3mA and 3A. The device is rated for a maximum power dissipation of 1.5W and operates at junction temperatures up to 150°C. Packaged in a TO-220AB through-hole configuration, this transistor is suitable for applications in industrial control systems and power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220AB |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
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