2SA1871-T1-AZ
2SA1871-T1-AZ - PNP SILICON TRIPManufacturer: Renesas
Categories: Single Bipolar Transistors
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Renesas 2SA1871-T1-AZ is a PNP bipolar junction transistor designed for demanding applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 1A, with a maximum power dissipation of 2W. Exhibiting a transition frequency of 30MHz, it is suitable for power switching and amplification circuits. The transistor operates within a temperature range of -55°C to 150°C. Supplied in a TO-243AA (MP-2) surface mount package, the 2SA1871-T1-AZ finds application in industrial control, power supply units, and general-purpose amplification within the electronics industry. Key parameters include a minimum DC current gain (hFE) of 30 at 100mA, 5V and a saturation voltage (Vce(sat)) of 1V at 300mA, 60mA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 60mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | MP-2 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 2 W |
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