2SA1836-T1-A
2SA1836-T1-A - PNP SILICON EPITAManufacturer: Renesas
Categories: Single Bipolar Transistors
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The Renesas 2SA1836-T1-A is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 180 MHz and a maximum power dissipation of 200 mW, it is suitable for general-purpose amplification and switching in telecommunications and consumer electronics. The SC-75 package, also known as SOT-416, ensures a compact footprint. Key electrical parameters include a minimum DC current gain (hFE) of 90 at 1mA and 6V, and a Vce(sat) of 300mV at 10mA and 100mA. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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