UPD48288236AF1-E24-DW1-A
IC DRAM 288MBIT HSTL 144TFBGAManufacturer: Renesas
Categories: Memory
Quality Control: Learn More
Renesas UPD48288236AF1-E24-DW1-A is a 288Mbit Low-Voltage Differential Signaling (LVDS) Synchronous DRAM. This memory component features an 8M x 36 organization and operates with an HSTL interface. It supports a clock frequency of 400 MHz with an access time of 500 ps. The device is housed in a 144-TFBGA package with dimensions of 11x18.5 mm, suitable for surface mounting. The operating voltage range is 1.7V to 1.9V, and it is specified for an operating temperature range of 0°C to 95°C (TC). This LLDRAM is commonly employed in networking infrastructure, high-performance computing, and advanced graphics applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 144-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 288Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | LLDRAM |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 144-TFBGA (11x18.5) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | HSTL |
| Access Time | 500 ps |
| Memory Organization | 8M x 36 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
HN58V66AFPI10E
HN58V66 - PARALLEL 64KBIT EEPROM
S71VS256RD0AHK4L0
S71VS256RD0AHK4L0 - MirrorBit 1
HN58V66ATI10E
HN58V66 - PARALLEL 64KBIT EEPROM
