UPA2790GR-E1-AT
MOSFET N/P-CH 30V 6A 8SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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The Renesas UPA2790GR-E1-AT is an N-channel and P-channel MOSFET array designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The on-resistance (Rds On) is specified as 28mOhm for the N-channel and 60mOhm for the P-channel, both measured at 3A and 10V Vgs. With a maximum power dissipation of 1.7W (Ta), it is suitable for operation up to 150°C. The input capacitance (Ciss) is 500pF for the N-channel and 460pF for the P-channel, with a typical gate charge (Qg) of 12.6nC and 11nC respectively. This surface mount component, housed in an 8-SOP package, finds application in automotive and industrial systems requiring robust switching performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 10V, 460pF @ 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V, 11nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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