UPA2756GR-E1-A
MOSFET 2N-CH 60V 4A 8PWRSOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Renesas UPA2756GR-E1-A is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component offers a 60V drain-source voltage rating and a continuous drain current capability of 4A at 25°C. Key electrical characteristics include a maximum on-resistance of 105mOhm at 2A and 10V, a gate charge of 6nC, and input capacitance of 260pF. The device operates efficiently within an ambient temperature range up to 150°C.
The UPA2756GR-E1-A utilizes Metal Oxide Semiconductor Field-Effect Transistor technology and is housed in an 8-PowerSOP package, facilitating surface-mount assembly. Its robust design makes it suitable for use in industrial automation, automotive systems, and consumer electronics where reliable power switching is critical. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PowerSOP |
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