UPA2752GR-E2-A
MOSFET 2N-CH 30V 8A 8SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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The Renesas UPA2752GR-E2-A is a dual N-channel MOSFET array designed for high-efficiency power switching applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A (Tc) at 25°C. The device exhibits a low on-resistance (Rds On) of 23mOhm at 4A, 10V, contributing to reduced conduction losses. With a gate charge (Qg) of 10nC (Max) at 10V and input capacitance (Ciss) of 480pF (Max) at 10V, it offers efficient switching characteristics. The MOSFET array is housed in an 8-SOP (8-SOIC) package, suitable for surface mounting, and operates at a maximum junction temperature of 150°C. Power dissipation is rated at 1.7W (Ta). This component finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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