UPA1981TE-T1-A
MOSFET N/P-CH 8V 2.8A SC95Manufacturer: Renesas
Categories: FET, MOSFET Arrays
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The Renesas UPA1981TE-T1-A is an N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 8V and a continuous drain current (Id) of 2.8A per channel at 25°C. The UPA1981TE-T1-A offers low on-resistance characteristics, with specified values of 70mOhm at 2.8A, 5V and 105mOhm at 1.9A, 2.5V. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 1W. The device is housed in a compact SC-95 surface mount package, making it suitable for space-constrained designs in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-95 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 200mV @ 2.8A, 200mV @ 1.9A |
| Supplier Device Package | SC-95 |
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