UPA1770G-E1-A
MOSFET 2P-CH 20V 6A 8SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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Renesas UPA1770G-E1-A is a dual P-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 6A at 25°C. The low on-resistance of 37mOhm at 3A and 4.5V (Vgs) minimizes conduction losses. With a gate charge (Qg) of 11nC maximum at 4.5V and input capacitance (Ciss) of 1300pF maximum at 10V, it is suitable for demanding power management circuits. The device is housed in an 8-SOP (Surface Mount) package, offering a compact footprint for space-constrained designs. Its maximum power dissipation is 750mW at 25°C (Ta). This MOSFET array finds application in automotive, industrial automation, and consumer electronics where efficient power switching is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 750mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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