UPA1760G-E1-AT
MOSFET 2N-CH 30V 8A 8SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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Renesas UPA1760G-E1-AT is a dual N-channel MOSFET array designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C. The array exhibits a low on-resistance of 26mOhm at 4A and 10V, contributing to efficient power management. With a gate charge (Qg) of 14nC maximum at 10V and input capacitance (Ciss) of 760pF maximum at 10V, it is suitable for various switching and control circuits. The device is packaged in an 8-SOIC surface mount configuration, rated for a maximum power dissipation of 2W. The UPA1760G-E1-AT finds utility in industrial automation, power management systems, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 10V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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