UPA1760G-E1-A
MOSFET 2N-CH 30V 8A 8SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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Renesas UPA1760G-E1-A is a dual N-channel MOSFET array designed for power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C. The low on-resistance of 26mOhm maximum at 4A and 10V Vgs makes it suitable for efficient power management. With a gate charge (Qg) of 14nC maximum and input capacitance (Ciss) of 760pF maximum, it offers good switching characteristics. The device is available in a surface mount 8-SOP package, operating up to 150°C, and dissipates a maximum power of 2W. This MOSFET array is utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 10V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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