UPA1602GS-E1-A
MOSFET 7N-CH 30V 0.43A 16SOPManufacturer: Renesas
Categories: FET, MOSFET Arrays
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The Renesas UPA1602GS-E1-A is a 7-channel N-channel MOSFET array designed for high-density board applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 430mA at 25°C, with a maximum power dissipation of 1W. The MOSFET array utilizes Metal Oxide technology and is housed in a 16-SOP package, suitable for surface mounting. Key electrical characteristics include an on-resistance (Rds On) of 5.3 Ohms at 150mA and 4.5V, and an input capacitance (Ciss) of 10pF maximum. The threshold voltage (Vgs(th)) is a maximum of 1V at 150mA. This component finds application in various electronic systems, including power management and signal switching within consumer electronics and industrial control equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 16-SOIC (0.220"", 5.59mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 7 N-Channel |
| Operating Temperature | -40°C ~ 85°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 150mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 150mA |
| Supplier Device Package | 16-SOP |
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