RQM2201DNS#P0
MOSFET 2N-CH 60V 2A 6HWSONManufacturer: Renesas
Categories: FET, MOSFET Arrays
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Renesas RQM2201DNS-P0 is a 60V dual N-channel MOSFET array suitable for applications in industrial and automotive sectors. This surface mount component, housed in a 6-HWSON (3x3) package, offers a continuous drain current of 2A (Ta) and a maximum power dissipation of 1.5W (Ta). Key electrical characteristics include a drain-source voltage (Vdss) of 60V, a typical gate charge (Qg) of 2.4nC at 4.5V, and input capacitance (Ciss) of 200pF at 10V. The on-resistance (Rds On) is specified at 225mOhm maximum at 1A and 4.5V. The device operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-HWSON (3x3) |
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