GN1L4M-T2-A
TRANS PREBIAS PNP 50V 0.1A SC70Manufacturer: Renesas Electronics Corporation
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas Electronics Corporation PNP Pre-Biased Transistor, part number GN1L4M-T2-A. This component is a single, pre-biased bipolar transistor designed for surface mount applications within the SC-70 (SOT-323) package. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 95 at 50mA and 5V. Saturation voltage at 250µA base current and 5mA collector current is a maximum of 200mV. Integrated base resistors (R1) of 47 kOhms and emitter resistors (R2) of 47 kOhms are included for simplified circuit design. The maximum power dissipation is 150mW. This component is commonly found in general-purpose switching and amplification applications across various electronics industries. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 95 @ 50mA, 5V |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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