FN4L4M-T1B-A
TRANS PREBIAS NPN 50V 0.1AManufacturer: Renesas Electronics Corporation
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas Electronics Corporation FN4L4M-T1B-A is an NPN pre-biased bipolar transistor designed for efficient switching and amplification applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 200mW. The integrated base resistors, R1 and R2, are both specified at 22 kOhms, simplifying circuit design by eliminating the need for external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 85 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 200mV at 250µA base current and 5mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. This pre-biased transistor is commonly utilized in industrial automation, consumer electronics, and communication systems where consistent and reliable transistor operation is critical. The FN4L4M-T1B-A is supplied in a Box package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µ, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 5mA, 5V |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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