FA4F4M-T1B-A
TRANS PREBIAS NPN 50V 0.1AManufacturer: Renesas Electronics Corporation
Categories: Single, Pre-Biased Bipolar Transistors
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The Renesas Electronics Corporation FA4F4M-T1B-A is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 60 at 50mA and 5V. Included base resistors are R1 at 22 kOhms and R2 at 22 kOhms. With a maximum power dissipation of 200mW, it is suitable for applications requiring simple switching and amplification circuits. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems. The FA4F4M-T1B-A is supplied in box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µ, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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