CE2A3Q-T-AZ
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas Electronics Corporation's CE2A3Q-T-AZ is an NPN pre-biased bipolar junction transistor. This through-hole component features a collector current capability of up to 2 A and a collector-emitter breakdown voltage of 60 V. It offers a minimum DC current gain (hFE) of 1000 at 1 A and 5 V. The integrated base resistor (R1) is 1 kOhm, and the emitter-base resistor (R2) is 10 kOhm, simplifying circuit design for bias. With a maximum power dissipation of 1 W and a collector cutoff current of 100 nA (ICBO), this transistor is suitable for applications in industrial automation and consumer electronics. The 3-SSIP package is supplied in bulk.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SSIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 5V |
| Supplier Device Package | - |
| Grade | - |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | - |
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